Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness...
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IEEE Sensors Journal; Volume: 16, No. 2
2015
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| Acceso en línea: | http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/690 |
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ir-p17054coll23-6902020-09-28 Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition Pérez Taborda, Jaime Andrés; Riascos Landázury, Henry; Vera Londoño, Liliana Patricia AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films. These measurements detected carbon and oxygen contamination at the surface. In the high-resolution X-ray photoelectron spectroscopy Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore the value of optical energy gap, Eg was about 5.3 (± 0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500°C. Acoustic materials; Coatings; Laser sintering; Plasma materials processing; SAW filters; Wide band gap semiconductors Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines 2015 IEEE Sensors Journal; Volume: 16, No. 2 PDF Artículo ENG - Inglés Colfuturo © Derechos reservados del autor http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/690 |
| institution |
Biblioteca Virtual Banco de la República - Colecciones digitales |
| collection |
Custom |
| language |
Desconocido (Unknown) |
| topic |
Acoustic materials; Coatings; Laser sintering; Plasma materials processing; SAW filters; Wide band gap semiconductors Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines |
| spellingShingle |
Acoustic materials; Coatings; Laser sintering; Plasma materials processing; SAW filters; Wide band gap semiconductors Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines Pérez Taborda, Jaime Andrés; Riascos Landázury, Henry; Vera Londoño, Liliana Patricia Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| description |
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films.
These measurements detected carbon and oxygen contamination at the surface. In the high-resolution X-ray photoelectron spectroscopy Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore the value of optical energy gap, Eg was about 5.3 (± 0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500°C. |
| format |
Artículo (Article) |
| author |
Pérez Taborda, Jaime Andrés; Riascos Landázury, Henry; Vera Londoño, Liliana Patricia |
| author_facet |
Pérez Taborda, Jaime Andrés; Riascos Landázury, Henry; Vera Londoño, Liliana Patricia |
| author_sort |
Pérez Taborda, Jaime Andrés; Riascos Landázury, Henry; Vera Londoño, Liliana Patricia |
| title |
Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| title_short |
Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| title_full |
Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| title_fullStr |
Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| title_full_unstemmed |
Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| title_sort |
correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition |
| publisher |
IEEE Sensors Journal; Volume: 16, No. 2 |
| publishDate |
2015 |
| url |
http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/690 |
| _version_ |
1682460022534045696 |
| score |
12,131701 |