Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness...
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| Formato: | Artículo (Article) |
| Lenguaje: | Desconocido (Unknown) |
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IEEE Sensors Journal; Volume: 16, No. 2
2015
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| Acceso en línea: | http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/690 |