Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering
Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according t...
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Formato: | Artículo (Article) |
Lenguaje: | Desconocido (Unknown) |
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Nanotechnology 27
2016
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Materias: | |
Acceso en línea: | http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/673 |
Sumario: | Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according to previously reported values on films—with a relatively large power factor (? centerdot S 2= 16 ?W centerdot m? 1 centerdot K? 2). More importantly, a reduction in the thermal conductivity at room temperature (?= 1.13±0.12 W. |
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