Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according t...

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Detalles Bibliográficos
Autor Principal: Pérez Taborda, Jaime Andrés; Romero, Juan José; Muñoz Rojo, Miguel; Briones, Fernando; Maíz, Jon; Martín González, Marisol
Formato: Artículo (Article)
Lenguaje:Desconocido (Unknown)
Publicado: Nanotechnology 27 2016
Materias:
Acceso en línea:http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/673