Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)

Aluminum nitride films (AlN) were produced by Nd:YAG pulsed laser (PLD), with repetition rate of 10 Hz. The laser interaction on Al target under nitrogen gas atmosphere generates plasma which is produced at room temperature with variation in the pressure work from 0.39 Pa to 1.5 Pa thus producing di...

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Autor Principal: Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.; Riascos Landázury, Henry; Saldarriaga, W.
Formato: Artículo (Article)
Lenguaje:Desconocido (Unknown)
Publicado: Optics & Laser Technology; Vol. 69 2015
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Acceso en línea:http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/664
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spelling ir-p17054coll23-6642020-09-28 Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN) Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.; Riascos Landázury, Henry; Saldarriaga, W. Aluminum nitride films (AlN) were produced by Nd:YAG pulsed laser (PLD), with repetition rate of 10 Hz. The laser interaction on Al target under nitrogen gas atmosphere generates plasma which is produced at room temperature with variation in the pressure work from 0.39 Pa to 1.5 Pa thus producing different AlN films. In this sense the dependency of optical properties with the pressure of deposition was studied. The plasma generated at different pressures was characterized by optical emission spectroscopy (OES). Additionally ionic and atomic species from the emission spectra obtained were observed. The plume electronic temperature has been determined by assuming a local thermodynamic equilibrium of the emitting species. Finally the electronic temperature was calculated with Boltzmann plot from relative intensities of spectral lines. The morphology and composition of the films were studied using atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy analysis (XPS) and Raman Spectroscopy. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range from 400 nm to 900 nm. A clear dependence in morphological properties and optical properties, as a function of the applied deposition pressure, was found in this work which offers a novel application in optoelectronic industry. Aluminum nitride; Morphology and optical properties; Pulsed laser deposition Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines 2015 Optics & Laser Technology; Vol. 69 PDF Artículo ENG - Inglés Colfuturo © Derechos reservados del autor http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/664
institution Biblioteca Virtual Banco de la República - Colecciones digitales
collection Custom
language Desconocido (Unknown)
topic Aluminum nitride; Morphology and optical properties; Pulsed laser deposition
Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines
spellingShingle Aluminum nitride; Morphology and optical properties; Pulsed laser deposition
Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines
Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.; Riascos Landázury, Henry; Saldarriaga, W.
Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)
description Aluminum nitride films (AlN) were produced by Nd:YAG pulsed laser (PLD), with repetition rate of 10 Hz. The laser interaction on Al target under nitrogen gas atmosphere generates plasma which is produced at room temperature with variation in the pressure work from 0.39 Pa to 1.5 Pa thus producing different AlN films. In this sense the dependency of optical properties with the pressure of deposition was studied. The plasma generated at different pressures was characterized by optical emission spectroscopy (OES). Additionally ionic and atomic species from the emission spectra obtained were observed. The plume electronic temperature has been determined by assuming a local thermodynamic equilibrium of the emitting species. Finally the electronic temperature was calculated with Boltzmann plot from relative intensities of spectral lines. The morphology and composition of the films were studied using atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy analysis (XPS) and Raman Spectroscopy. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range from 400 nm to 900 nm. A clear dependence in morphological properties and optical properties, as a function of the applied deposition pressure, was found in this work which offers a novel application in optoelectronic industry.
format Artículo (Article)
author Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.; Riascos Landázury, Henry; Saldarriaga, W.
author_facet Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.; Riascos Landázury, Henry; Saldarriaga, W.
author_sort Pérez Taborda, Jaime Andrés; Caicedo, J. C.; Grisales, M.; Riascos Landázury, Henry; Saldarriaga, W.
title Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)
title_short Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)
title_full Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)
title_fullStr Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)
title_full_unstemmed Deposition pressure effect on chemical, morphological and optical properties of binary Al-nitrides structural and optical properties of compounds (AIN, GaN, InN)
title_sort deposition pressure effect on chemical, morphological and optical properties of binary al-nitrides structural and optical properties of compounds (ain, gan, inn)
publisher Optics & Laser Technology; Vol. 69
publishDate 2015
url http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/664
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score 11,489418