AlN film deposition as a semiconductor device

AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (1...

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Autor Principal: Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C.
Formato: Artículo (Article)
Lenguaje:Desconocido (Unknown)
Publicado: Ingeniería e Investigación; Vol. 33, No. 2 2013
Materias:
Acceso en línea:http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633
id ir-p17054coll23-633
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spelling ir-p17054coll23-6332020-09-28 AlN film deposition as a semiconductor device Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C. AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW). Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física 2013 Ingeniería e Investigación; Vol. 33, No. 2 PDF Artículo ENG - Inglés Colfuturo © Derechos reservados del autor http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633
institution Biblioteca Virtual Banco de la República - Colecciones digitales
collection Custom
language Desconocido (Unknown)
topic Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave
Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física
spellingShingle Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave
Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física
Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C.
AlN film deposition as a semiconductor device
description AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW).
format Artículo (Article)
author Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C.
author_facet Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C.
author_sort Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C.
title AlN film deposition as a semiconductor device
title_short AlN film deposition as a semiconductor device
title_full AlN film deposition as a semiconductor device
title_fullStr AlN film deposition as a semiconductor device
title_full_unstemmed AlN film deposition as a semiconductor device
title_sort aln film deposition as a semiconductor device
publisher Ingeniería e Investigación; Vol. 33, No. 2
publishDate 2013
url http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633
_version_ 1682460006366052352
score 12,131701