AlN film deposition as a semiconductor device
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (1...
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Ingeniería e Investigación; Vol. 33, No. 2
2013
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Acceso en línea: | http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633 |
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ir-p17054coll23-6332020-09-28 AlN film deposition as a semiconductor device Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C. AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW). Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física 2013 Ingeniería e Investigación; Vol. 33, No. 2 PDF Artículo ENG - Inglés Colfuturo © Derechos reservados del autor http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633 |
institution |
Biblioteca Virtual Banco de la República - Colecciones digitales |
collection |
Custom |
language |
Desconocido (Unknown) |
topic |
Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física |
spellingShingle |
Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C. AlN film deposition as a semiconductor device |
description |
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target.
The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW). |
format |
Artículo (Article) |
author |
Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C. |
author_facet |
Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C. |
author_sort |
Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C. |
title |
AlN film deposition as a semiconductor device |
title_short |
AlN film deposition as a semiconductor device |
title_full |
AlN film deposition as a semiconductor device |
title_fullStr |
AlN film deposition as a semiconductor device |
title_full_unstemmed |
AlN film deposition as a semiconductor device |
title_sort |
aln film deposition as a semiconductor device |
publisher |
Ingeniería e Investigación; Vol. 33, No. 2 |
publishDate |
2013 |
url |
http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633 |
_version_ |
1682460006366052352 |
score |
12,131701 |