AlN film deposition as a semiconductor device

AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (1...

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Detalles Bibliográficos
Autor Principal: Pérez Taborda, Jaime Andrés; Aperador, W.; Caicedo, J. C.
Formato: Artículo (Article)
Lenguaje:Desconocido (Unknown)
Publicado: Ingeniería e Investigación; Vol. 33, No. 2 2013
Materias:
Acceso en línea:http://babel.banrepcultural.org/cdm/ref/collection/p17054coll23/id/633