Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition

AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness...

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Detalles Bibliográficos
Autor Principal: Pérez Taborda, Jaime Andrés; Vera Londoño, Liliana Patricia; Riascos Landázury, Henry
Formato: Artículo (Article)
Lenguaje:Desconocido (Unknown)
Publicado: IEEE Sensors Journal; Vol. 16, No. 2 2016
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