Ferroelectric behavior of bismuth titanate thin films grown via magnetron sputtering

Bismuth titanate (BixTiyOz) thin films were grown using the r.f. magnetron sputtering technique on (100) silicon substrates. In the process, annealing was performed in both oxygen and dry air atmospheres at 600 1C for 30 and 120 min. The structure of the thin films was characterized through X-ray...

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Detalles Bibliográficos
Autores Principales: Bedoya-Hincapié, C.M., Restrepo-Parra, E., Olaya-Flórez, J.J., Alfonso, J.E., Flores-Ruiz, F.J., Espinoza-Beltrán, F.J.
Formato: Desconocido (Unknown)
Publicado: 2020
Materias:
PFM
Acceso en línea:http://hdl.handle.net/11634/20882