Ferroelectric behavior of bismuth titanate thin films grown via magnetron sputtering
Bismuth titanate (BixTiyOz) thin films were grown using the r.f. magnetron sputtering technique on (100) silicon substrates. In the process, annealing was performed in both oxygen and dry air atmospheres at 600 1C for 30 and 120 min. The structure of the thin films was characterized through X-ray...
|Autores Principales:||, , , , ,|
|Acceso en línea:||http://hdl.handle.net/11634/20882|