Comparative analysis of threshold voltage extraction techniques based in the MOSFET gm/ID characteristic

Context: In advanced ultralow-power devices, it is necessary to use the accuracy extraction procedures of the MOSFET threshold voltage to fully characterize the devices. These procedures are based in the measurement of the Tran-conductance efficiency (gm/ID) and its first derivative in function of t...

Descripción completa

Detalles Bibliográficos
Autor Principal: Fajardo Jaimes, Arturo
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: Universidad Distrital Francisco José de Caldas. Colombia 2017
Materias:
Acceso en línea:http://hdl.handle.net/11349/20863