Structural and morphological analysis of aluminum nitride films of obtained by pulsed laser deposition
This paper gives the preliminary results about aluminum nitride (AlN) nanoestructured films deposited by pulsed laser deposition (PLD) technique, by using laser Nd:YAG (λ=1064), which hit a target of high purity aluminum (4N) in a nitrogen atmosphere. We used glass slide, Si 3 N4 (100) and Si (100)...
| Autores Principales: | , , , |
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| Formato: | Artículo (Article) |
| Lenguaje: | Español (Spanish) |
| Publicado: |
Universidad Militar Nueva Granada
2010
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| Materias: | |
| Acceso en línea: | http://hdl.handle.net/10654/33126 |