On the validity of difusional model in determination of electric transport parameters of semiconductor compound

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin l...

Descripción completa

Detalles Bibliográficos
Autores Principales: Dussan, A., Mesa, F.
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: Institute of Physics Polish Academy of Sciences 2014
Materias:
VRH
Acceso en línea:https://repository.urosario.edu.co/handle/10336/28442
https://doi.org/10.12693/APhysPolA.125.171

Ejemplares similares