On the validity of difusional model in determination of electric transport parameters of semiconductor compound

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin l...

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Autores Principales: Dussan, A., Mesa, F.
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: Institute of Physics Polish Academy of Sciences 2014
Materias:
VRH
Acceso en línea:https://repository.urosario.edu.co/handle/10336/28442
https://doi.org/10.12693/APhysPolA.125.171
id ir-10336-28442
recordtype dspace
spelling ir-10336-284422020-08-28T15:48:12Z On the validity of difusional model in determination of electric transport parameters of semiconductor compound Sobre la validez del modelo difusional en la determinación de los parámetros de transporte eléctrico de compuestos semiconductores Dussan, A. Mesa, F. Transport mechanism Diffusional model VRH In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds. 2014-02 2020-08-28T15:48:12Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion ISSN: 0587-4246 EISSN: 1898-794X https://repository.urosario.edu.co/handle/10336/28442 https://doi.org/10.12693/APhysPolA.125.171 eng info:eu-repo/semantics/openAccess application/pdf Institute of Physics Polish Academy of Sciences Acta Physica Polonica A Proceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkey
institution EdocUR - Universidad del Rosario
collection DSpace
language Inglés (English)
topic Transport mechanism
Diffusional model
VRH
spellingShingle Transport mechanism
Diffusional model
VRH
Dussan, A.
Mesa, F.
On the validity of difusional model in determination of electric transport parameters of semiconductor compound
description In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds.
format Artículo (Article)
author Dussan, A.
Mesa, F.
author_facet Dussan, A.
Mesa, F.
author_sort Dussan, A.
title On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_short On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_full On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_fullStr On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_full_unstemmed On the validity of difusional model in determination of electric transport parameters of semiconductor compound
title_sort on the validity of difusional model in determination of electric transport parameters of semiconductor compound
publisher Institute of Physics Polish Academy of Sciences
publishDate 2014
url https://repository.urosario.edu.co/handle/10336/28442
https://doi.org/10.12693/APhysPolA.125.171
_version_ 1676708489731244032
score 11,382149