On the validity of difusional model in determination of electric transport parameters of semiconductor compound
In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin l...
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Institute of Physics Polish Academy of Sciences
2014
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Acceso en línea: | https://repository.urosario.edu.co/handle/10336/28442 https://doi.org/10.12693/APhysPolA.125.171 |
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ir-10336-284422020-08-28T15:48:12Z On the validity of difusional model in determination of electric transport parameters of semiconductor compound Sobre la validez del modelo difusional en la determinación de los parámetros de transporte eléctrico de compuestos semiconductores Dussan, A. Mesa, F. Transport mechanism Diffusional model VRH In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds. 2014-02 2020-08-28T15:48:12Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion ISSN: 0587-4246 EISSN: 1898-794X https://repository.urosario.edu.co/handle/10336/28442 https://doi.org/10.12693/APhysPolA.125.171 eng info:eu-repo/semantics/openAccess application/pdf Institute of Physics Polish Academy of Sciences Acta Physica Polonica A Proceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkey |
institution |
EdocUR - Universidad del Rosario |
collection |
DSpace |
language |
Inglés (English) |
topic |
Transport mechanism Diffusional model VRH |
spellingShingle |
Transport mechanism Diffusional model VRH Dussan, A. Mesa, F. On the validity of difusional model in determination of electric transport parameters of semiconductor compound |
description |
In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds. |
format |
Artículo (Article) |
author |
Dussan, A. Mesa, F. |
author_facet |
Dussan, A. Mesa, F. |
author_sort |
Dussan, A. |
title |
On the validity of difusional model in determination of electric transport parameters of semiconductor compound |
title_short |
On the validity of difusional model in determination of electric transport parameters of semiconductor compound |
title_full |
On the validity of difusional model in determination of electric transport parameters of semiconductor compound |
title_fullStr |
On the validity of difusional model in determination of electric transport parameters of semiconductor compound |
title_full_unstemmed |
On the validity of difusional model in determination of electric transport parameters of semiconductor compound |
title_sort |
on the validity of difusional model in determination of electric transport parameters of semiconductor compound |
publisher |
Institute of Physics Polish Academy of Sciences |
publishDate |
2014 |
url |
https://repository.urosario.edu.co/handle/10336/28442 https://doi.org/10.12693/APhysPolA.125.171 |
_version_ |
1676708489731244032 |
score |
12,131701 |