On the validity of difusional model in determination of electric transport parameters of semiconductor compound
In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin l...
| Autores Principales: | , |
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| Formato: | Artículo (Article) |
| Lenguaje: | Inglés (English) |
| Publicado: |
Institute of Physics Polish Academy of Sciences
2014
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| Materias: | |
| Acceso en línea: | https://repository.urosario.edu.co/handle/10336/28442 https://doi.org/10.12693/APhysPolA.125.171 |