Reliability challenges for GaN-based FETs

GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...

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Autores Principales: Kuball, Martin, Uren, Michael J., Pomeroy, James W., Karboyan, Serge, Chatterjee, Indranil, Liu, Dong, Anaya, Julian, Brazzini, Tommaso
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: The Japan Society of Applied Physics 2016
Materias:
Acceso en línea:https://repository.urosario.edu.co/handle/10336/28399
https://doi.org/10.7567/SSDM.2016.N-4-01
id ir-10336-28399
recordtype dspace
spelling ir-10336-283992020-08-28T15:48:07Z Reliability challenges for GaN-based FETs Desafíos de confiabilidad para los FET basados ??en GaN Kuball, Martin Uren, Michael J. Pomeroy, James W. Karboyan, Serge Chatterjee, Indranil Liu, Dong Anaya, Julian Brazzini, Tommaso GaN-based Power electronic applications GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed. 2016 2020-08-28T15:48:07Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion https://repository.urosario.edu.co/handle/10336/28399 https://doi.org/10.7567/SSDM.2016.N-4-01 eng info:eu-repo/semantics/openAccess application/pdf The Japan Society of Applied Physics 2016 International Conference on Solid State Devices and Materials
institution EdocUR - Universidad del Rosario
collection DSpace
language Inglés (English)
topic GaN-based
Power electronic applications
spellingShingle GaN-based
Power electronic applications
Kuball, Martin
Uren, Michael J.
Pomeroy, James W.
Karboyan, Serge
Chatterjee, Indranil
Liu, Dong
Anaya, Julian
Brazzini, Tommaso
Reliability challenges for GaN-based FETs
description GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.
format Artículo (Article)
author Kuball, Martin
Uren, Michael J.
Pomeroy, James W.
Karboyan, Serge
Chatterjee, Indranil
Liu, Dong
Anaya, Julian
Brazzini, Tommaso
author_facet Kuball, Martin
Uren, Michael J.
Pomeroy, James W.
Karboyan, Serge
Chatterjee, Indranil
Liu, Dong
Anaya, Julian
Brazzini, Tommaso
author_sort Kuball, Martin
title Reliability challenges for GaN-based FETs
title_short Reliability challenges for GaN-based FETs
title_full Reliability challenges for GaN-based FETs
title_fullStr Reliability challenges for GaN-based FETs
title_full_unstemmed Reliability challenges for GaN-based FETs
title_sort reliability challenges for gan-based fets
publisher The Japan Society of Applied Physics
publishDate 2016
url https://repository.urosario.edu.co/handle/10336/28399
https://doi.org/10.7567/SSDM.2016.N-4-01
_version_ 1676708489017163776
score 12,131701