Reliability challenges for GaN-based FETs
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...
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The Japan Society of Applied Physics
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Acceso en línea: | https://repository.urosario.edu.co/handle/10336/28399 https://doi.org/10.7567/SSDM.2016.N-4-01 |
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ir-10336-283992020-08-28T15:48:07Z Reliability challenges for GaN-based FETs Desafíos de confiabilidad para los FET basados ??en GaN Kuball, Martin Uren, Michael J. Pomeroy, James W. Karboyan, Serge Chatterjee, Indranil Liu, Dong Anaya, Julian Brazzini, Tommaso GaN-based Power electronic applications GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed. 2016 2020-08-28T15:48:07Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion https://repository.urosario.edu.co/handle/10336/28399 https://doi.org/10.7567/SSDM.2016.N-4-01 eng info:eu-repo/semantics/openAccess application/pdf The Japan Society of Applied Physics 2016 International Conference on Solid State Devices and Materials |
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EdocUR - Universidad del Rosario |
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language |
Inglés (English) |
topic |
GaN-based Power electronic applications |
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GaN-based Power electronic applications Kuball, Martin Uren, Michael J. Pomeroy, James W. Karboyan, Serge Chatterjee, Indranil Liu, Dong Anaya, Julian Brazzini, Tommaso Reliability challenges for GaN-based FETs |
description |
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed. |
format |
Artículo (Article) |
author |
Kuball, Martin Uren, Michael J. Pomeroy, James W. Karboyan, Serge Chatterjee, Indranil Liu, Dong Anaya, Julian Brazzini, Tommaso |
author_facet |
Kuball, Martin Uren, Michael J. Pomeroy, James W. Karboyan, Serge Chatterjee, Indranil Liu, Dong Anaya, Julian Brazzini, Tommaso |
author_sort |
Kuball, Martin |
title |
Reliability challenges for GaN-based FETs |
title_short |
Reliability challenges for GaN-based FETs |
title_full |
Reliability challenges for GaN-based FETs |
title_fullStr |
Reliability challenges for GaN-based FETs |
title_full_unstemmed |
Reliability challenges for GaN-based FETs |
title_sort |
reliability challenges for gan-based fets |
publisher |
The Japan Society of Applied Physics |
publishDate |
2016 |
url |
https://repository.urosario.edu.co/handle/10336/28399 https://doi.org/10.7567/SSDM.2016.N-4-01 |
_version_ |
1676708489017163776 |
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12,131701 |