Reliability challenges for GaN-based FETs

GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...

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Detalles Bibliográficos
Autores Principales: Kuball, Martin, Uren, Michael J., Pomeroy, James W., Karboyan, Serge, Chatterjee, Indranil, Liu, Dong, Anaya, Julian, Brazzini, Tommaso
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: The Japan Society of Applied Physics 2016
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