Reliability challenges for GaN-based FETs

GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...

Descripción completa

Detalles Bibliográficos
Autores Principales: Kuball, Martin, Uren, Michael J., Pomeroy, James W., Karboyan, Serge, Chatterjee, Indranil, Liu, Dong, Anaya, Julian, Brazzini, Tommaso
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: The Japan Society of Applied Physics 2016
Materias:
Acceso en línea:https://repository.urosario.edu.co/handle/10336/28399
https://doi.org/10.7567/SSDM.2016.N-4-01