Reliability challenges for GaN-based FETs
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for o...
| Autores Principales: | , , , , , , , |
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| Formato: | Artículo (Article) |
| Lenguaje: | Inglés (English) |
| Publicado: |
The Japan Society of Applied Physics
2016
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| Materias: | |
| Acceso en línea: | https://repository.urosario.edu.co/handle/10336/28399 https://doi.org/10.7567/SSDM.2016.N-4-01 |