Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
"Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. W...
| Autores Principales: | , , , , , , , |
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| Formato: | Artículo (Article) |
| Lenguaje: | Inglés (English) |
| Publicado: |
Institute for the Advancement of Chemical Sciences
2012
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| Materias: | |
| Acceso en línea: | https://repository.urosario.edu.co/handle/10336/27916 https://doi.org/10.3762/bjnano.3.31 |