Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

"Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. W...

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Autores Principales: Mesa, Fredy, Chamorro, William, Vallejo, William, Baier, Robert, Dittrich, Thomas, Grimm, Alexander, Lux Steriner, Martha C, Sadewasser, Sascha
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: Institute for the Advancement of Chemical Sciences 2012
Materias:
Acceso en línea:https://repository.urosario.edu.co/handle/10336/27916
https://doi.org/10.3762/bjnano.3.31
id ir-10336-27916
recordtype dspace
spelling ir-10336-279162021-01-21T08:17:07Z Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements Formación de la unión de Cu 3BiS 3 investigada por microscopía de fuerza de sonda Kelvin y mediciones de fotovoltaje de superficie Mesa, Fredy Chamorro, William Vallejo, William Baier, Robert Dittrich, Thomas Grimm, Alexander Lux Steriner, Martha C Sadewasser, Sascha Buffer layer Cu3BiS3 Kelvin probe force microscopy Solar cells "Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased." 2012 2020-08-19T14:44:37Z info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion ISSN: 2190-4286 https://repository.urosario.edu.co/handle/10336/27916 https://doi.org/10.3762/bjnano.3.31 eng info:eu-repo/semantics/openAccess application/pdf Institute for the Advancement of Chemical Sciences Beilstein Journal of Nanotechnology
institution EdocUR - Universidad del Rosario
collection DSpace
language Inglés (English)
topic Buffer layer
Cu3BiS3
Kelvin probe force microscopy
Solar cells
spellingShingle Buffer layer
Cu3BiS3
Kelvin probe force microscopy
Solar cells
Mesa, Fredy
Chamorro, William
Vallejo, William
Baier, Robert
Dittrich, Thomas
Grimm, Alexander
Lux Steriner, Martha C
Sadewasser, Sascha
Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
description "Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased."
format Artículo (Article)
author Mesa, Fredy
Chamorro, William
Vallejo, William
Baier, Robert
Dittrich, Thomas
Grimm, Alexander
Lux Steriner, Martha C
Sadewasser, Sascha
author_facet Mesa, Fredy
Chamorro, William
Vallejo, William
Baier, Robert
Dittrich, Thomas
Grimm, Alexander
Lux Steriner, Martha C
Sadewasser, Sascha
author_sort Mesa, Fredy
title Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
title_short Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
title_full Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
title_fullStr Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
title_full_unstemmed Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
title_sort junction formation of cu 3bis 3 investigated by kelvin probe force microscopy and surface photovoltage measurements
publisher Institute for the Advancement of Chemical Sciences
publishDate 2012
url https://repository.urosario.edu.co/handle/10336/27916
https://doi.org/10.3762/bjnano.3.31
_version_ 1690577364395753472
score 11,38372