Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

"Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. W...

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Detalles Bibliográficos
Autores Principales: Mesa, Fredy, Chamorro, William, Vallejo, William, Baier, Robert, Dittrich, Thomas, Grimm, Alexander, Lux Steriner, Martha C, Sadewasser, Sascha
Formato: Artículo (Article)
Lenguaje:Inglés (English)
Publicado: Institute for the Advancement of Chemical Sciences 2012
Acceso en línea:https://repository.urosario.edu.co/handle/10336/27916