Transient surface photovoltage of p-type Cu3BiS3
Thin films of Cu3BiS3 were prepared by coevaporation. Hall-effect, Seebeck-effect, and surface photovoltage measurements show that Cu3BiS3 is a p-type semiconductor with Hall-mobility, free carrier concentration, and thermo-electric power of 4?cm2/V?s, 2×1016?cm?3, and 0.73 mV/K, respectively. The w...
| Autores Principales: | , , , , , |
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| Formato: | Artículo (Article) |
| Lenguaje: | Inglés (English) |
| Publicado: |
American Institute of Physics
2010
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| Materias: | |
| Acceso en línea: | https://repository.urosario.edu.co/handle/10336/27126 https://doi.org/10.1063/1.3334728 |