Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study
We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x¼0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method wa...
Autores Principales: | Mesa, Fredy, Seña, N., Dussan, Anderson, Castaño, E., González-Hernández, R. |
---|---|
Otros Autores: | NanoTech |
Formato: | Documento de trabajo (Working Paper) |
Lenguaje: | Inglés (English) |
Publicado: |
2016
|
Materias: | |
Acceso en línea: | http://repository.urosario.edu.co/handle/10336/12563 |
Ejemplares similares
-
The effect of Mn2Sb2 and Mn2Sb secondary phases on magnetism in (GaMn)Sb thin films
por: Calderón, Jorge A., et al.
Publicado: (2020) -
The effect of Mn2Sb2 and Mn2Sb secondary phases on magnetism in (GaMn)Sb thin films.
por: Calderon, Jorge A, et al.
Publicado: (2020) -
First-Principles Calculations of the Electronic and Structural Properties of GaSb
por: Castaño-González, E.-E., et al.
Publicado: (2016) -
Structural, optical and morphological properties of Ga1?xMnxAs thin films deposited by magnetron sputtering for spintronic device applications
por: Bernal, M.E., et al.
Publicado: (2012) -
Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys
por: Calderón J.A., et al.
Publicado: (2017)